Three-dimensional micromachining of silicon using focused high-energy ion beams
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چکیده
There are many techniques available for two-dimensional machining and patterning of semiconductor surfaces for optoelectronic and microelectronic applications. These mainly use photolithography, electron beam or X-ray lithography or reactive ion etching. Smooth surfaces and high-aspect ratio sidewalls can be produced, but they are all limited to creating a single etch depth per processing stage. Multiple depths of etching and inclined or curved surfaces require a sequence of repeated processes which is both complex and expensive.
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